DRAM Solutions
High-performance dynamic random-access memory for every workload tier
What is DRAM?
Dynamic Random Access Memory (DRAM) is the primary working memory inside modern compute platforms, delivering fast, low-latency access to data for CPUs, GPUs, and accelerators.
Glocal Storage manufactures DRAM devices on leading-edge process technologies to provide outstanding bandwidth, low power consumption, and long-term reliability. Our portfolio spans PCs, servers, smartphones, gaming consoles, AI accelerators, and embedded designs.
Up to 6400 MT/s throughput for latency-sensitive workloads.
Advanced power-management features keep thermal budgets in check.
Enterprise-grade qualification with MTBF greater than one million hours.
1α nm process nodes deliver densities up to 24 Gb per die.
6400
MT/s819
GB/s24 Gb
DensityArchitected for Modern Platforms
Core design principles behind Glocal Storage DRAM
Advanced Process
Manufactured on 1α nm-class nodes for optimal density, yield, and cost-per-bit advantages.
High Bandwidth
DDR5 and LPDDR5 reach 6400 MT/s, while HBM3 delivers unprecedented throughput for AI clusters.
Optimized Power
Dynamic voltage and frequency scaling plus deep sleep states keep systems efficient at scale.
Data Integrity
ECC support and advanced error mitigation maintain data accuracy across mission-critical deployments.
Wide Temperature Range
Qualified from -40°C to 95°C to withstand harsh edge environments and industrial equipment.
Configurable Portfolio
Multiple densities, speeds, and package options make it easy to align with your platform roadmap.
DRAM Product Families
Purpose-built memory for client, data center, AI, and graphics applications
DDR Memory
Designed for desktops and servers that demand predictable performance and endurance.
- DDR4 up to 3200 MT/s
- DDR5 up to 6400 MT/s
- Enterprise reliability with ECC
- Registered, UDIMM, and SODIMM form factors
LPDDR Memory
Low-power DRAM tuned for smartphones, tablets, ultrabooks, and edge AI devices.
- LPDDR4X up to 4266 MT/s
- LPDDR5/LPDDR5X up to 6400 MT/s
- Ultra-compact packages
- Industry-leading standby power
HBM Memory
High Bandwidth Memory stacked through-silicon vias for accelerator-grade throughput.
- HBM2E up to 3.2 GT/s per pin
- HBM3 up to 6.4 GT/s per pin
- Massive parallelism with 1024-bit interfaces
- Ideal for AI training and supercomputing
GDDR Memory
Graphics double data rate memory optimized for visual computing and inference.
- GDDR6 up to 18 Gbps
- GDDR6X up to 21 Gbps
- Superior signal integrity and bandwidth
- Optimized for ray tracing and AI inference
Key Specifications
Representative metrics across the Glocal Storage DRAM family
Performance
- Maximum frequency6400 MT/s
- Peak bandwidthUp to 819 GB/s
- Typical latencyCL 22–40
- Die densityUp to 24 Gb
Technology
- Process node1α nm
- Operating voltage1.1 V nominal
- Operating temperature-40°C to 95°C
- ReliabilityMTBF > 1,000,000 hours
Where Our DRAM Excels
Trusted memory technology for diverse industries
Client Computing
Delivering responsive performance for modern PCs and workstations.
Data Centers
Powering hyperscale cloud, analytics, and virtualization platforms.
Mobile Devices
Enabling thin-and-light designs with low-power LPDDR technology.
AI & ML
Feeding accelerators with the bandwidth required for large-scale training.
Ready to configure a DRAM solution?
Our solution architects can help you validate configurations, optimize performance, and plan supply.